http://heritageit.dspaces.org/jspui/handle/123456789/1065 2026-07-10T03:50:08Z 2026-07-10T03:50:08Z Chatterjee, Sabyasachi Banerjee, Prabir http://heritageit.dspaces.org/jspui/handle/123456789/10942 2026-04-10T05:01:53Z 2025-10-01T00:00:00Z

Title: Predictive power allocation for real-time wireless applications in NOMA systems Authors: Chatterjee, Sabyasachi; Banerjee, Prabir Abstract: The escalating demand for high data throughput, seamless connectivity, and minimal latency in wireless communication necessitates advanced techniques such as non-orthogonal multiple access (NOMA), which offer superior efficiency and scalability compared to traditional methods. This study introduces a novel priority-fading weighted power allocation (PF-WPA) model for NOMA systems, which dynamically allocates transmission power by incorporating user-specific application priorities and varying channel conditions. The PF-WPA model is embedded within a long short-term memory (LSTM) architecture to enhance adaptability and predictive accuracy. The resulting hybrid model is evaluated across diverse fading environments, including Rayleigh, Rician, and Nakagami-m, to validate its predictive accuracy and power allocation performance. Analytical graphs illustrate optimal power distribution patterns for real-time wireless applications. Comparative analyses further confirm the superiority of the proposed scheme over existing ConvLSTM and MLP-LSTM approaches in terms of sum-rate efficiency and fairness. These findings underscore the model’s potential for deployment in latency-sensitive, resource-constrained wireless systems.

2025-10-01T00:00:00Z Banerjee, Prabir Chatterjee, Sabyasachi Banerjee, Panchajanya http://heritageit.dspaces.org/jspui/handle/123456789/10941 2026-04-10T05:01:38Z 2025-02-01T00:00:00Z

Title: Predicting Ergodic Data Capacity and BER for MIMO Communication Systems using SVM Model Authors: Banerjee, Prabir; Chatterjee, Sabyasachi; Banerjee, Panchajanya Abstract: The maximum error-free data rate that a channel can support is known as the data handling capacity of the channel. In today's era of widespread digital communication, all channels inevitably aim to operate at their maximum data rate. Over the years, researchers have extensively explored various technologies and modulation techniques to boost data transmission speeds. Orthogonal frequency division multiplexing followed by a multiple input multiple output system is used for 5G technology to achieve an enhanced data rate. However, as is true for all systems and designs, MIMO systems also have pockets of vulnerability. The two most sensitive parameters are the impairment level at the transmitter end and a variable correlation coefficient at the receiver end. In this paper, we have concentrated on the receiver end distortion because it affects the data rate capacity. In MIMO systems, at the receiver end, the kappa factor, which is a function of the channel impulse response, and α, a factor dependent on the correlation coefficient of the identical antennas, significantly influence the maximum ergodic data rate and the corresponding bit error rate. In this work, we have applied the support vector regression model to simulate the non-linear nature of these issues and established a relation between the SVM-predicted result and data obtained from an opensource data set. The proposed scheme helps the designers and propagation engineers derive realistic data rate values by considering two important factors.

2025-02-01T00:00:00Z Chakraborty, Chirayush Kundu, Atanu http://heritageit.dspaces.org/jspui/handle/123456789/10940 2026-04-10T05:01:26Z 2024-01-01T00:00:00Z

Title: Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT Authors: Chakraborty, Chirayush; Kundu, Atanu Abstract: Current transistor technology has issues with off-state current which reduces power efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT device to tackle these issues. A novel dual recessed gate technology is implemented in the device which deepens the depletion region, creating a strong barrier that prevents current flow at negative gate voltage. The study investigates various recessed gate heights’ impact on analog and RF performance. Key parameters like drain and gate Currents, transconductance, and transconductance generation factor were analyzed, alongside intrinsic capacitance, gate capacitance, intrinsic resistance and maximum oscillation frequency. Results indicate that a 19 nm recessed gate height offers optimal performance. It is the only one to achieve a normally off state and a substantial 45% increase in transconductance compared to other heights. This research provides crucial insights into designing efficient Normally-off U-DG AlGaN/GaN MOS-HEMT devices, particularly relevant for low-power applications.

2024-01-01T00:00:00Z Pattra, Arijit Das, Saumodip Kar, Mousiki Dey, Sayan http://heritageit.dspaces.org/jspui/handle/123456789/10939 2026-04-10T05:01:02Z 2024-01-01T00:00:00Z

Title: Graded Junction ZnO on rGO Conduction Layer for Ultraselective Cu(II) Ion Detection Authors: Pattra, Arijit; Das, Saumodip; Kar, Mousiki; Dey, Sayan Abstract: The discharge of noxious effluents from industries into water bodies results in an increase in the contamination of consumable water with heavy metal ions. This study illustrates a graded junction-based reduced graphene oxide (rGO)/ZnO heterojunction device that is capable of detecting Cu(II) ions in water at an ultrafast and highly selective rate. The voltage-assisted chemical bath deposition (CBD) technique was employed to fabricate the graded junction ZnO on the rGO carrier transport layer (CTL). The device exhibited a maximum response of 99% for 40 ppm of Cu(II) when exposed to controlled quantities of Cu(II) ions. The response and recovery times were rapid, at 0.31 and 0.58 s, respectively, and the limit of detection (LOD) was 0.1 ppm at room temperature at 5 V. In comparison to other analogous ions, the sensor has been demonstrated to be highly selective toward Cu(II). The device was determined to be highly repeatable for a 45-day period, with a maximal error of 1.9% and a response deviation of 2.4%. The device’s high sensitivity in comparison to its existing counterparts was facilitated by the graded ZnO structure and its variable bandgap and depletion layer modulation. Additionally, the incorporation of the CTL facilitated the high-speed detection of Cu(II) ions. The graded junction-assisted adsorption mechanism elucidated the device’s unconventional behavior as it was fabricated. Consequently, this device can be used as a suitable replacement for its conventional counterparts in the detection of Cu(II) ions in solution.

2024-01-01T00:00:00Z