Abstract
Current transistor technology has issues with off-state current which reduces power efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT device to tackle these issues. A novel dual recessed gate technology is implemented in the device which deepens the depletion region, creating a strong barrier that prevents current flow at negative gate voltage. The study investigates various recessed gate heights’ impact on analog and RF performance. Key parameters like drain and gate Currents, transconductance, and transconductance generation factor were analyzed, alongside intrinsic capacitance, gate capacitance, intrinsic resistance and maximum oscillation frequency. Results indicate that a 19 nm recessed gate height offers optimal performance. It is the only one to achieve a normally off state and a substantial 45% increase in transconductance compared to other heights. This research provides crucial insights into designing efficient Normally-off U-DG AlGaN/GaN MOS-HEMT devices, particularly relevant for low-power applications.
ACKNOWLEDGEMENT
The authors extend their sincere appreciation to the IEEE Electron Device Society – Centre of Excellence at the Heritage Institute of Technology, Kolkata, for generously providing access to laboratory facilities.
AUTHORS’ CONTRIBUTIONS
Chirayush Chakraborty (Author 1) made significant contributions to this work, particularly in conceptualising and executing the Analog and RF analysis. He was instrumental in developing the requisite data and analysis tools, ensuring precise calibration of results, and crafting the manuscript.
Atanu Kundu (Author 2) merits acknowledgement for his foundational input. He conceived the core concept and guided the overall trajectory of the research. Additionally, his invaluable guidance and rigorous review greatly contributed to the project's development.
CONSENT TO PARTICIPATE
This research was conducted with informed consent from all participants.
CONSENT FOR PUBLICATION
All authors have provided permission for the publication of this research.
Disclosure statement
No potential conflict of interest was reported by the author(s).
ETHICAL APPROVAL
All procedures conducted in studies involving human participants followed the ethical guidelines established by the institutional and/or national research committee, as well as adhered to the principles outlined in the 1964 Helsinki Declaration and its subsequent revisions, or comparable ethical standards.
INFORMED CONSENT
All participants in the study provided consent after receiving adequate information about the study.
DATA AVAILABILITY
The raw/processed data required to reproduce these findings cannot be shared at this time due to technical or time limitations.
Additional information
Notes on contributors
Chirayush Chakraborty
Chirayush Chakraborty is a graduate student having a BTech degree in electronics and communication engineering from the Heritage Institute of Technology, Kolkata. He is the current ExCom member of the IEEE Electron Devices Society’s Student Branch Chapter of his institute.
Atanu Kundu
Atanu Kundu is an associate professor at the Heritage Institute of Technology, Kolkata, India. He completed his MTech and PhD from the Department of ETCE, Jadavpur University in 2009 and 2016, respectively. He also serves as the vice chair of the IEEE Kolkata Section. Email: kundu.atanu@gmail.com