An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

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DC Field	Value	Language
dc.contributor.author	Majumdar, Arijit	-
dc.contributor.author	Chatterjee, Soumyo	-
dc.contributor.author	Chatterjee, Sayan	-
dc.contributor.author	Chaudhari, Sheli Sinha	-
dc.contributor.author	Poddar, Dipak Ranjan	-
dc.date.accessioned	2022-06-08T08:22:59Z	-
dc.date.available	2022-06-08T08:22:59Z	-
dc.date.issued	2020-12	-
dc.identifier.uri	http://172.16.0.4:8085/heritage/handle/123456789/6164	-
dc.description.abstract	In this article, ambient temperature effect on small signal model of AIGa N/GaN HEMT has been explored . Based on the study, an analytical method to understand the ambient temperature dependence on device behaviour has been developed. Effectiveness of the proposed method has been illustrated through comparison with measured data. Moreover , comparison with other analytical methods has also been carried out illustrating its acceptability threshold.	en_US
dc.publisher	Research Article	en_US
dc.subject	ambient temperature	en_US
dc.subject	curvefitting	en_US
dc.subject	GaN HEMT	en_US
dc.subject	Small signal Model	en_US
dc.title	An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting	en_US
dc.title.alternative	International Journal of R-F and Microwave Computer Aided Engineering	en_US
Appears in Collections:	Electronics and Communication Engineering (Publications)

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