http://localhost:80/xmlui/handle/123456789/1065 Sun, 22 Mar 2026 09:25:43 GMT 2026-03-22T09:25:43Z http://localhost:80/xmlui/handle/123456789/8632 Title: Feature Importance Genes from Breast Cancer Subtypes Classification Employing Machine Learning Authors: Bhowmick, Shib Sankar Abstract: The heterogeneous nature of breast cancer necessitates exploring its molecular subtypes for the early prognosis and treatment of cancer patients. Recent advances in genomics have enabled the investigation of gene expression data in breast cancer research as an alternative to traditional methods. In this regard, a project like The Cancer Genome Atlas (TCGA) provided easy access to the vast high-throughput sequencing gene expression data, including Breast cancer. However, finding evidence of the involvement of a set of genes in a particular breast cancer subtype from this large bulk of gene expression dataset is a demanding task. Here, we propose to develop a classification model based on machine learning to uncover the significant genes associated with different breast cancer subtypes like Basal, human epidermal growth factor receptor 2, luminal A, and luminal B. The RNA-Sequence gene expression data from The Cancer Genome Atlas is used for the tumor and normal sample classification and breast cancer subtype-specific optimal set of gene identification for this experiment. Experimental results show that the average classification accuracy value for different gene subsets varies from 75.36–77.74% depending upon the breast cancer subtype and feature selection method. Additionally, the feature scoring mechanism introduced in our model ranks the Feature Importance genes as three*, four*, five*, and six*. Besides this, Kaplan–Meier survival analysis, Composite network analysis, and Gene Ontology analysis are conducted to highlight the biological significance of the Feature Importancegenes. Given the classification results and the biological insight, we may conclude that the proposed model extracts a set of informative genes involved in breast cancer development, particularly the Basal, human epidermal growth factor receptor 2, luminal A, and luminal B subtypes. Description: https://doi.org/10.1134/S1022795423130021 Sun, 01 Jan 2023 00:00:00 GMT http://localhost:80/xmlui/handle/123456789/8632 2023-01-01T00:00:00Z http://localhost:80/xmlui/handle/123456789/7401 Title: Design and implementation of a frequency synthesizer using PLL Authors: Adak, Asima Abstract: An investigation has been made to find the new frequency from a reference frequency such is done for the beneficial of day-to-day rapid increase in the technology and its uses. The effect of such is derived from the comparison of analog circuits and digital circuits to find the better result. A software analysis is also done to verify the result. Mainly for the regular use of wireless technology this work is done and compared for the analysis of better result. Phase lock loop is used to get the better frequency response from the crystal oscillator used as a reference frequency. It is a very essential component for modern technology Description: DOI: https://doi.org/10.14741/ijcet/v.12.3.5 Wed, 01 Jun 2022 00:00:00 GMT http://localhost:80/xmlui/handle/123456789/7401 2022-06-01T00:00:00Z http://localhost:80/xmlui/handle/123456789/6165 Title: Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability Authors: Vandana, B.; Mohapatra, S.K.; Das, J.K.; Pradhan, K.P.; Kundu, A.; Kaushik, B.K. Abstract: This work investigates the reliability assessment of high-k spacer and the effect of temperature on the device analog/RF performance for Inverted ‘T' (IT) Junctionless (JL) FinFET. A systematic analysis is performed for different high-k spacer materials, like, SiO2, Si3N4, and HfO2 to improve the analog/RF performances. This work also represents the effect of oxide stacking i.e., low-k on high-k materials as a spacer to ensure device reliability for analog/RF performance. Various performances as subthreshold swing (SS), current switching ratio (ION/IOFF ratio), drain induced barrier lowering (DIBL), transconductance (gm), early voltage (VEA), gain (AV), higher order derivatives of current (gm1, gm2, gm3), Capacitance (CGS, CGD, CGG), cut-off frequency (fT), 2nd and 3rd order voltage intercept point (VIP2, VIP3), 3rd order intermodulation input intercept point (IIP3) are analyzed for the device. The obtained results are achieved with uniform high doping concentration under bulk conduction mechanism which downsizes the short channel effects and thereby enhances the linearity FoMs for analog/RF circuit applications. At 300 K, the acquire SCEs for high-k spacers, for example, SS, ION/IOFF ratio, DIBL accomplish to be 64 mV/decade, 107, 26 mV/V respectively. In contrast with distinctive temperature variation from 200 K to 400 K, the SCEs at 300 K are same to that of the high-k spacers. Thu, 01 Apr 2021 00:00:00 GMT http://localhost:80/xmlui/handle/123456789/6165 2021-04-01T00:00:00Z http://localhost:80/xmlui/handle/123456789/6164 Title: An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting Authors: Majumdar, Arijit; Chatterjee, Soumyo; Chatterjee, Sayan; Chaudhari, Sheli Sinha; Poddar, Dipak Ranjan Abstract: In this article, ambient temperature effect on small signal model of AIGa N/GaN HEMT has been explored . Based on the study, an analytical method to understand the ambient temperature dependence on device behaviour has been developed. Effectiveness of the proposed method has been illustrated through comparison with measured data. Moreover , comparison with other analytical methods has also been carried out illustrating its acceptability threshold. Tue, 01 Dec 2020 00:00:00 GMT http://localhost:80/xmlui/handle/123456789/6164 2020-12-01T00:00:00Z